| PART |
Description |
Maker |
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| GT28F640W18BC60 GE28F640W18BD80 GE28F640W18BC60 GT |
Intel? Wireless Flash Memory
|
Intel Corporation
|
| 28F320D18 |
1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 双平面闪速存储器) 1.8 V的英特尔双平面闪存（1.8伏英特尔双平面闪速存储器
|
Intel, Corp.
|
| GE28F640W18 |
Wireless Flash Memory
|
Intel Corporation
|
| PF38F5070M0P0B PF38F5070M0Q0B PC48F4400PPT00 PC48F |
Numonyx Wireless Flash Memory (W18)
|
Numonyx B.V
|
| PF48F4400M0Y0B0 |
Numonyx Wireless Flash Memory (W18) with AD Multiplexed IO
|
Numonyx B.V
|
| BAS16 BAS16/T1 BAS16W/T1 |
DIODE KLEINSIGNAL SMD 贴片二极管KLEINSIGNAL
CY7C603xx Wireless; Memory Size: 8K; RAM: 512B; Vcc (V): 2.4-3.6V; Core: M8C; Code Memory Architecture: Flash; Development Kit: CY3656 二极管采用SOT 323 SCHALT
High-speed diode
|
Won-Top Electronics Co., Ltd.
Philips Semiconductors
NXP Semiconductors
|
| E28F320J5-120 DA28F320J5A-120 E28F320J5A-120 DT28F |
5 Volt Intel StrataFlash㈢ Memory
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|56PIN|PLASTIC
|
Intel Corporation
|
| TE28F640C3 TE28F160C3 TE28F800C3 28F160C3 28F320C3 |
3 Volt Intel Advanced Boot Block Flash Memory
IC, DIGITAL, 1 GATE SCHMITT-TRIGGER, INVERTER, CMOS, 1.65-5.5V, 4.6NS, SC-70-5,
|
INTEL[Intel Corporation]
Intel Corp.
|
| CY7C60323-LTXC CY7C60323-PVXC CY7C60323-LTXCT CY7C |
enCoRe III Low Voltage Wireless presenter tools
enCoRe?/a> III Low Voltage Wireless presenter tools
enCoRe(TM) III Low Voltage; Core: M8C; Code Memory Architecture: Flash; Code Memory Size: 8 KB; RAM size: 512 B MULTIFUNCTION PERIPHERAL, QCC32
enCoRe(TM) III Low Voltage; Core: M8C; Code Memory Architecture: Flash; Code Memory Size: 8 KB; RAM size: 512 B
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| AM29F032B-75 AM29F032B-90EF |
32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:32Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 4M X 8 FLASH 5V PROM, 90 ns, PDSO40
|
Spansion, Inc.
|
